Levitated Spinning Graphene

A method is described for levitating micron-sized few layer graphene flakes in a quadrupole ion trap. Starting from a liquid suspension containing graphene, charged flakes are injected into the trap using the electrospray ionization technique and are probed optically. At micro-torr pressures, torques from circularly polarized light cause the levitated particles to rotate at frequencies >1 MHz, which can be inferred from modulation of light scattering off the rotating flake when an electric field resonant with the rotation rate is applied. Possible applications of these techniques will be presented, both to fundamental measurements of the mechanical and electronic properties of graphene and to new approaches to graphene crystal growth, modification and manipulation.Comment: 23 pages, 11 figure

Detection of a single-charge defect in a metal-oxide-semiconductor structure using vertically coupled Al and Si single-electron transistors

An Al-AlO_x-Al single-electron transistor (SET) acting as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned Si SET at the Si/SiO_2 interface near the MOSFET channel conductance threshold. By using such a vertically coupled Al and Si SET system, we have detected a single-charge defect which is tunnel-coupled to the Si SET. By solving a simple electrostatic model, the fractions of each coupling capacitance associated with the defect are extracted. The results reveal that the defect is not a large puddle or metal island, but its size is rather small, corresponding to a sphere with a radius less than 1 nm. The small size of the defect suggests it is most likely a single-charge trap at the Si/SiO_2 interface. Based on the ratios of the coupling capacitances, the interface trap is estimated to be about 20 nm away from the Si SET.Comment: 5 pages and 5 figure

Coulomb blockade in a Si channel gated by an Al single-electron transistor

We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated with Coulomb blockade in the channel, revealing the formation of a Si single-electron transistor. Abrupt steps present in sweeps of the Al transistor conductance versus gate voltage are correlated with single-electron charging events in the Si transistor, and vice versa. Analysis of these correlations using a simple electrostatic model demonstrates that the two single-electron transistor islands are closely aligned, with an inter-island capacitance approximately equal to 1/3 of the total capacitance of the Si transistor island, indicating that the Si transistor is strongly coupled to the Al transistor.Comment: 3 pages, 4 figures, 1 table; typos corrected, minor clarifications added; published in AP

Quantum Spin Hall Effect in Graphene

We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts graphene from an ideal two dimensional semimetallic state to a quantum spin Hall insulator. This novel electronic state of matter is gapped in the bulk and supports the quantized transport of spin and charge in gapless edge states that propagate at the sample boundaries. The edge states are non chiral, but they are insensitive to disorder because their directionality is correlated with spin. The spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder and symmetry breaking fields are discussed.Comment: 4 pages, published versio

High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces

We have fabricated and characterized a field-effect transistor in which an electric field is applied through an encapsulated vacuum cavity and induces a two-dimensional electron system on a hydrogen-passivated Si(111) surface. This vacuum cavity preserves the ambient sensitive surface and is created via room temperature contact bonding of two Si substrates. Hall measurements are made on the H-Si(111) surface prepared in aqueous ammonium fluoride solution. We obtain electron densities up to $6.5 \times 10^{11}$ cm$^{-2}$ and peak mobilities of $\sim 8000$ cm$^{2}$/V s at 4.2 K.Comment: to appear in Applied Physics Letter

Magnetic field-assisted manipulation and entanglement of Si spin qubits

Architectures of donor-electron based qubits in silicon near an oxide interface are considered theoretically. We find that the precondition for reliable logic and read-out operations, namely the individual identification of each donor-bound electron near the interface, may be accomplished by fine-tuning electric and magnetic fields, both applied perpendicularly to the interface. We argue that such magnetic fields may also be valuable in controlling two-qubit entanglement via donor electron pairs near the interface.Comment: 4 pages, 4 figures. 1 ref and 1 footnote adde

Electromagnetic field induced suppression of transport through nn-pp junctions in graphene

We study quasi-particle transmission through an $n$-$p$ junction in a graphene irradiated by an electromagnetic field (EF). In the absence of EF the electronic spectrum of undoped graphene is gapless, and one may expect the perfect transmission of quasi-particles flowing perpendicular to the junction. We demonstrate that the resonant interaction of propagating quasi-particles with the component of EF parallel to the junction induces a \textit{non-equilibrium dynamic gap} $(2\Delta_R)$ between electron and hole bands in the quasi-particle spectrum of graphene. In this case the strongly suppressed quasi-particle transmission is only possible due to interband tunnelling. The effect may be used for controlling transport properties of diverse structures in graphene, like, e.g., $n$-$p$-$n$ transistors, single electron transistors, quantum dots, etc., by variation of the intensity $S$ and frequency $\omega$ of the external radiation.Comment: 5 pages, 3 figure